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SiC
Epitaxial Reactors M8 - M10
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Hot wall CVD concept
- LPE Proprietary Design Chamber
- Excellent gradient temperature control Induction heating
- Power consumption @ 1550°C: 20kW @ 2000°C: 36kW
High throughput & Low CoO
- Batch Load: [M8 6x2" - 3x3" - 1x4"] [M10
9x2" - 5x3" - 3x4"]
High vacuum
- < 1 x 10-7 mbar
Low and controllable background doping
- <= 1 x 1014 cm-3
Advanced process control
- Complete control of tool operations
- Full recipe management
High reliability and uptime
- Minimal maintenance
For more information you can downlod ACiS
technical specification. |
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