SILICON CARBIDE EPITAXIAL REACTOR PE1O6

GENERAL DESCRIPTION

  • Single wafer 150mm epitaxy reactor
  • Hot wall inductive heating
  • Three-zone gas injection system
  • Load lock for inert purge between runs
  • Smallest footprint

 

UNMATCHED PROCESS FLEXIBILITY

  • Thin , thick and super thick epitaxial layers
  • Multilayer (p and n) in one run
  • Reduced pressure process capability

 

THROUGHPUT

  • Hi temperature robotized handling
  • Industry’s shortest heat up / cool down
  • High growth rate
  • Lowest CoO