LPE is taking part in EleGaNTe, “Electronics on GaN-based Technologies” (EleGaNTe) part of the R&D program PON “RICERCA E INNOVAZIONE” 2014 – 2020 Aerospazio. The main objective of EleGaNTE is to develop GaN components enabling technologies for the mm-wave frequency range for a RADAR FMCW (Frequency Modulated Continuous Wave) sensor capable to detect small obstacles for helicopters operating in critical conditions.
LPE’s role is to develop an innovative SiC high resistivity epitaxial layer on a standard 4H-SiC as a substrate for the GaN deposition. The scope is to reduce the impact of the Semi Insulating substrate used until now for the GaN deposition in terms of both cost and availability replacing by a lower cost better performance material. Discover more on: http://elegante.imm.cnr.it/